PARTIAL TOP DIELECTRIC STACK DISTRIBUTED BRAGG REFLECTORS FOR RED VERTICAL-CAVITY SURFACE-EMITTING LASER ARRAYS

Room temperature continuous wave operation of red (lambda(0) similar to 660 mm) vertical cavity surface emitting laser arrays is reported, The 1 x 64 arrays have a pitch of 100 mu m with device diameters of 15 mu m. Grown by metalorganic vapor phase epitaxy, the devices consist of an AlGaInP strained quantum well optical cavity active region surrounded by AlGaAs distributed Bragg reflectors (DBR's), The top coupling DBR includes a partial dielectric stack, deposited after implanted device fabrication, All 64 devices operate simultaneously with peak output powers >0.45 mW, threshold currents <1.5 mA, and threshold voltages less than or equal to 2.7 V, The differential quantum efficiencies exceed 10%.