SPUTTERING YIELD AND RADIATION-DAMAGE BY NEUTRAL BEAM BOMBARDMENT

[1] ION-ASSISTED AND ELECTRON-ASSISTED GAS-SURFACE CHEMISTRY - IMPORTANT EFFECT IN PLASMA-ETCHING [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) : 3189 - 3196

[2] PLASMA-ASSISTED ETCHING - ION-ASSISTED SURFACE-CHEMISTRY [J]. APPLICATIONS OF SURFACE SCIENCE, 1985, 22-3 (MAY): : 63 - 71

[3] DEPENDENCE OF LOW-ENERGY ION-BEAM EXPOSURE EFFECTS IN SILICON ON ION SPECIES, EXPOSURE HISTORY, AND MATERIAL PROPERTIES [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 7-8 (MAR) : 831 - 835

[4] RADIATION-DAMAGE IN SILICON DIOXIDE FILMS EXPOSED TO REACTIVE ION ETCHING [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (06) : 4015 - 4021

[5] EVIDENCE OF A CHARGE INDUCED CONTRIBUTION TO THE SPUTTERING YIELD OF INSULATING AND SEMICONDUCTING MATERIALS [J]. APPLIED PHYSICS LETTERS, 1986, 49 (04) : 188 - 190

[6] FONASH SJ, 1985, SOLID STATE TECHNOL, V28, P201

[7] SILICON DAMAGE CAUSED BY HYDROGEN CONTAINING PLASMAS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (11) : 2237 - 2241

[8] HAGSTRUM H, 1965, PHYS REV A, V139, P526

[9] KELLY R, 1984, ION BOMBARDMENT MODI, P62

[10] SIMULATION OF PLASMA-ASSISTED ETCHING PROCESSES BY ION-BEAM TECHNIQUES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (03): : 757 - 763

[1] ION-ASSISTED AND ELECTRON-ASSISTED GAS-SURFACE CHEMISTRY - IMPORTANT EFFECT IN PLASMA-ETCHING [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) : 3189 - 3196

[2] PLASMA-ASSISTED ETCHING - ION-ASSISTED SURFACE-CHEMISTRY [J]. APPLICATIONS OF SURFACE SCIENCE, 1985, 22-3 (MAY): : 63 - 71

[3] DEPENDENCE OF LOW-ENERGY ION-BEAM EXPOSURE EFFECTS IN SILICON ON ION SPECIES, EXPOSURE HISTORY, AND MATERIAL PROPERTIES [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 7-8 (MAR) : 831 - 835

[4] RADIATION-DAMAGE IN SILICON DIOXIDE FILMS EXPOSED TO REACTIVE ION ETCHING [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (06) : 4015 - 4021

[5] EVIDENCE OF A CHARGE INDUCED CONTRIBUTION TO THE SPUTTERING YIELD OF INSULATING AND SEMICONDUCTING MATERIALS [J]. APPLIED PHYSICS LETTERS, 1986, 49 (04) : 188 - 190

[6] FONASH SJ, 1985, SOLID STATE TECHNOL, V28, P201

[7] SILICON DAMAGE CAUSED BY HYDROGEN CONTAINING PLASMAS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (11) : 2237 - 2241

[8] HAGSTRUM H, 1965, PHYS REV A, V139, P526

[9] KELLY R, 1984, ION BOMBARDMENT MODI, P62

[10] SIMULATION OF PLASMA-ASSISTED ETCHING PROCESSES BY ION-BEAM TECHNIQUES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (03): : 757 - 763