TITANIUM SILICIDE FORMATION BY ION-BEAM MIXING AND RAPID THERMAL ANNEALING

[21] ION-INDUCED SILICIDE FORMATION IN NIOBIUM THIN-FILMS [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1979, 42 (3-4): : 217 - 226

[22] A SELF-ALIGNED MO-SILICIDE FORMATION [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1983, 22 (01): : L57 - L59

[23] MIGRATION OF MO ATOMS ACROSS MO-SI INTERFACE INDUCED BY AR+ ION-BOMBARDMENT [J]. APPLIED PHYSICS LETTERS, 1974, 25 (06) : 337 - 339

[24] OKABAYASHI H, 1982, 1982 P INT EL DEV M, P556

[25] OSBURN CM, 1982, 1ST P INT S VLSI SCI, P213

[26] ION-IMPLANTATION TECHNIQUE FOR SIMULTANEOUS FORMATION OF A SHALLOW SILICON P-N-JUNCTION AND A SHALLOW SILICIDE SILICON OHMIC CONTACT [J]. THIN SOLID FILMS, 1983, 104 (3-4) : 383 - 389

[27] SELECTIVE TUNGSTEN SILICIDE FORMATION BY ION-BEAM MIXING AND RAPID THERMAL ANNEALING [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (06) : 1890 - 1894

[28] VANDERWEG WF, 1974, APPLICATIONS ION BEA, P209

[29] INTERFACE MODIFICATION OF REFRACTORY METAL-SILICON STRUCTURES BY ION-IMPLANTATION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06): : 1909 - 1912

[30] INDUCED INTERFACE INTERACTIONS IN TI-SI SYSTEMS BY ION-IMPLANTATION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02): : 130 - 133

[21] ION-INDUCED SILICIDE FORMATION IN NIOBIUM THIN-FILMS [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1979, 42 (3-4): : 217 - 226

[22] A SELF-ALIGNED MO-SILICIDE FORMATION [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1983, 22 (01): : L57 - L59

[23] MIGRATION OF MO ATOMS ACROSS MO-SI INTERFACE INDUCED BY AR+ ION-BOMBARDMENT [J]. APPLIED PHYSICS LETTERS, 1974, 25 (06) : 337 - 339

[24] OKABAYASHI H, 1982, 1982 P INT EL DEV M, P556

[25] OSBURN CM, 1982, 1ST P INT S VLSI SCI, P213

[26] ION-IMPLANTATION TECHNIQUE FOR SIMULTANEOUS FORMATION OF A SHALLOW SILICON P-N-JUNCTION AND A SHALLOW SILICIDE SILICON OHMIC CONTACT [J]. THIN SOLID FILMS, 1983, 104 (3-4) : 383 - 389

[27] SELECTIVE TUNGSTEN SILICIDE FORMATION BY ION-BEAM MIXING AND RAPID THERMAL ANNEALING [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (06) : 1890 - 1894

[28] VANDERWEG WF, 1974, APPLICATIONS ION BEA, P209

[29] INTERFACE MODIFICATION OF REFRACTORY METAL-SILICON STRUCTURES BY ION-IMPLANTATION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06): : 1909 - 1912

[30] INDUCED INTERFACE INTERACTIONS IN TI-SI SYSTEMS BY ION-IMPLANTATION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02): : 130 - 133