A MECHANISTIC STUDY OF SF6 REACTIVE ION ETCHING OF TUNGSTEN

被引：31

作者：

TURBAN, G

COULON, JF

MUTSUKURA, N

机构：

来源：

THIN SOLID FILMS | 1989年 / 176卷 / 02期

关键词：

D O I：

10.1016/0040-6090(89)90102-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：289 / 308

页数：20

共 33 条

[1] REACTIVE ION ETCHING OF TUNGSTEN FILMS SPUTTER DEPOSITED ON GAAS [J].

ADACHI, S ;

SUSA, N .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (12) :2980-2989

[2] ETCHING OF TUNGSTEN WITH XEF2 - AN X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY [J].

BENSAOULA, A ;

GROSSMAN, E ;

IGNATIEV, A .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (11) :4587-4590

[3]

BRIAUD P, 1986, MATER RES SOC S P, V68, P109

[4]

BRIAUD P, 1987, 8TH INT S PLASM CHEM, V2, P1010

[5]

BRIAUD P, 1988, THESIS U NANTES

[6]

CHEN CH, 1987, TUNGSTEN OTHER REFRA, V2, P357

[7] PLASMA-ETCHING OF REFRACTORY GATES FOR VLSI APPLICATIONS [J].

CHOW, TP ;

STECKL, AJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (10) :2325-2335

[8] PLASMA-ETCHING OF SI AND SIO2 IN SF6-O2 MIXTURES [J].

DAGOSTINO, R ;

FLAMM, DL .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (01) :162-167

[9] PLASMA-ASSISTED ETCHING OF TUNGSTEN FILMS - A QUARTZ-CRYSTAL MICROBALANCE STUDY [J].

FRACASSI, F ;

COBURN, JW .

JOURNAL OF APPLIED PHYSICS, 1988, 63 (05) :1758-1761

[10] ION-BOMBARDMENT-ENHANCED PLASMA-ETCHING OF TUNGSTEN WITH NF3/O-2 [J].

GREENE, WM ;

HESS, DW ;

OLDHAM, WG .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (05) :1570-1572

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