GROWTH OF VERY-LOW DEEP IMPURITY DENSITY (N-T-LESS-THAN-5X10(11) CM(-3))INXGA1-XP ON GAAS BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION

InxGa1-xP layers lattice matched and lattice mismatched to GaAs substrates have been grown by metalorganic chemical vapor deposition (MOCVD). Deep level transient spectroscopy, double crystal x-ray diffraction, and current-voltage measurement were employed to characterize InxGa1-xP layers and InxGa1-xP/GaAs heterojunctions. We have observed a shallow electron trap located at E(C)-60 meV in InxGa1-xP layers with x<0.469, and a deep electron trap at E(C)-0.85 eV with x>0.532. However, no deep levels were detected in InxGa1-xP (0.469<x<0.532) layers. The deep levels, if they exist, have a concentration of less than 5x10(11) cm(-3) which is the lowest deep level concentration reported so far in MOCVD grown InxGa1-xP materials. This is also the first observation in which lattice mismatches ranging from -0.125% to +0.224% (0.469<x<0.532) do not generate deep levels in MOCVD grown InxGa1-xP. (C) 1995 American Vacuum Society.