REACTIVE ION-BEAM ETCHING OF SIO2 AND POLY-SI EMPLOYING C2F6, SIF4 AND BF3 GASES

被引：8

作者：

OKANO, H

HORIIKE, Y

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1982年 / 21卷 / 05期

关键词：

D O I：

10.1143/JJAP.21.696

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：696 / 701

页数：6

共 15 条

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