PHOTOQUENCHING EFFECT AND THERMAL RECOVERY PROCESS FOR MIDGAP LEVELS IN GAAS - AN EL2 FAMILY IN GAAS

被引:15
作者
CHO, HY
KIM, EK
MIN, SK
机构
来源
PHYSICAL REVIEW B | 1989年 / 39卷 / 14期
关键词
D O I
10.1103/PhysRevB.39.10376
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:10376 / 10379
页数:4
相关论文
共 32 条
[1]   METASTABILITY OF THE ISOLATED ARSENIC-ANTISITE DEFECT IN GAAS [J].
CHADI, DJ ;
CHANG, KJ .
PHYSICAL REVIEW LETTERS, 1988, 60 (21) :2187-2190
[2]   DEEP-LEVEL OPTICAL SPECTROSCOPY IN GAAS [J].
CHANTRE, A ;
VINCENT, G ;
DUBOIS .
PHYSICAL REVIEW B, 1981, 23 (10) :5335-5359
[3]   PROPERTIES OF VACANCY DEFECTS IN GAAS SINGLE-CRYSTALS [J].
CHIANG, SY ;
PEARSON, GL .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (07) :2986-2991
[4]  
CHO HY, IN PRRESS APPL PHY A
[5]  
CHO HY, 1988, NEW PHYS KOREAN PHYS, V28, P740
[6]   THERMAL RECOVERY OF PHOTOQUENCHED EL2 INFRARED-ABSORPTION IN GAAS [J].
FISCHER, DW .
PHYSICAL REVIEW B, 1988, 37 (06) :2968-2972
[7]   QUENCHING AND RECOVERY SPECTRA OF MIDGAP LEVELS (EL2) IN SEMIINSULATING GAAS MEASURED BY DOUBLE-BEAM PHOTOCONDUCTIVITY [J].
HARIU, T ;
SATO, T ;
KOMORI, H ;
MATSUSHITA, K .
JOURNAL OF APPLIED PHYSICS, 1987, 61 (03) :1068-1072
[8]   IDENTIFICATION OF THE 0.82-EV ELECTRON TRAP, EL2 IN GAAS, AS AN ISOLATED ANTISITE ARSENIC DEFECT [J].
KAMINSKA, M ;
SKOWRONSKI, M ;
KUSZKO, W .
PHYSICAL REVIEW LETTERS, 1985, 55 (20) :2204-2207
[9]   INTRACENTER TRANSITIONS IN THE DOMINANT DEEP LEVEL (EL2) IN GAAS [J].
KAMINSKA, M ;
SKOWRONSKI, M ;
LAGOWSKI, J ;
PARSEY, JM ;
GATOS, HC .
APPLIED PHYSICS LETTERS, 1983, 43 (03) :302-304
[10]   SITE SYMMETRY OF THE EL2 CENTER IN GAAS [J].
LEVINSON, M ;
KAFALAS, JA .
PHYSICAL REVIEW B, 1987, 35 (17) :9383-9386