ROOM-TEMPERATURE REACTIONS INVOLVING SILICON DANGLING BOND CENTERS AND MOLECULAR-HYDROGEN IN AMORPHOUS SIO2 THIN-FILMS ON SILICON

被引：33

作者：

CONLEY, JF

LENAHAN, PM

机构：

[1] The Pennsylvania State University, University Park

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1992年 / 39卷 / 06期

关键词：

D O I：

10.1109/23.211420

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Exposing thin films of amorphous SiO2 to molecular hydrogen at room temperature converts some silicon dangling bond defects, E' centers, into two hydrogen coupled complexes. We argue that these reactions may play important roles in radiation and hot carrier instabilities in metal/oxide/silicon devices.

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收藏

页码：2186 / 2191

页数：6

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