DIRECT OBSERVATION OF INTERFACIAL POINT-DEFECTS GENERATED BY CHANNEL HOT HOLE INJECTION IN N-CHANNEL METAL-OXIDE SILICON FIELD-EFFECT TRANSISTORS

被引：57

作者：

KRICK, JT

LENAHAN, PM

DUNN, GJ

机构：

[1] PENN STATE UNIV,UNIV PK,PA 16802

[2] MIT,LINCOLN LAB,LEXINGTON,MA 02173

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 26期

关键词：

D O I：

10.1063/1.105699

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using a modified electron spin resonance technique known as spin-dependent recombination, we have found that channel hot hole injection in n channel metal oxide silicon (MOS) transistors creates the trivalent silicon dangling bond defect known as the P(bo) center. This letter reports the first direct identification of the atomic structure of interfacial point defects created by channel hot carrier stressing in MOS transistors.

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页码：3437 / 3439

页数：3

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