DIRECT OBSERVATION OF INTERFACIAL POINT-DEFECTS GENERATED BY CHANNEL HOT HOLE INJECTION IN N-CHANNEL METAL-OXIDE SILICON FIELD-EFFECT TRANSISTORS

Using a modified electron spin resonance technique known as spin-dependent recombination, we have found that channel hot hole injection in n channel metal oxide silicon (MOS) transistors creates the trivalent silicon dangling bond defect known as the P(bo) center. This letter reports the first direct identification of the atomic structure of interfacial point defects created by channel hot carrier stressing in MOS transistors.