CHARACTERISTICS OF ZINC-OXIDE THIN-FILMS PREPARED BY RF MAGNETRON-MODE ELECTRON-CYCLOTRON-RESONANCE SPUTTERING

被引：37

作者：

INUKAI, T ^{[1
]}

MATSUOKA, M ^{[1
]}

ONO, K ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP, INTERDISCIPLINARY RES LABS, MUSASHINO, TOKYO 180, JAPAN

来源：

THIN SOLID FILMS | 1995年 / 257卷 / 01期

关键词：

ELECTRICAL PROPERTIES AND MEASUREMENTS; OPTICAL PROPERTIES; PLASMA PROCESSING AND DEPOSITION; ZINC OXIDE;

D O I：

10.1016/0040-6090(94)06325-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Zinc oxide thin films were reactively deposited on glass substrates by r.f. magnetron-mode sputtering employing electron cyclotron resonance (ECR) plasma, and their crystallographic characteristics, electrical resistivity and optical properties were characterized. Single-phase zinc oxide thin films were deposited at very low gas pressures of 10(-2) Pa in an O-2 and Ar mixed gas atmosphere. They exhibited a c-axis orientation of below 3 degrees full width at half maximum (FWHM) for X-ray rocking curves, an extremely high resistivity of 10(7)-10(10) Omega cm, and a low optical attenuation of 3.3 dB cm(-1) at a wavelength of 0.63 mu m. These results indicate that irradiation of ECR plasma during deposition plays an important role in preparing high-quality zinc oxide film.

引用

页码：22 / 27

页数：6

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