A PROCESS-PARAMETER-BASED CIRCUIT SIMULATION-MODEL FOR ION-IMPLANTED MOSFETS AND MESFETS

被引：8

作者：

KARMALKAR, S

BHAT, KN

机构：

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1989年 / 24卷 / 01期

关键词：

D O I：

10.1109/4.16313

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：139 / 145

页数：7

共 9 条

[1] ONLINE EXTRACTION OF MODEL PARAMETERS OF A LONG BURIED-CHANNEL MOSFET [J].

BHATTACHARYYA, AB ;

RATNAM, P ;

NAGCHOUDHURI, D ;

RUSTAGI, SC .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (03) :545-550

[2]

CHEN TH, 1985, IEEE T ELECTRON DEV, V32, P18, DOI 10.1109/T-ED.1985.21903

[3] THE CORRECT EQUIVALENT BOX REPRESENTATION FOR THE BURIED LAYER OF BC MOSFETS IN TERMS OF THE IMPLANTATION PARAMETERS [J].

KARMALKAR, S ;

BHAT, KN .

IEEE ELECTRON DEVICE LETTERS, 1987, 8 (10) :457-459

[4]

KARMALKAR S, IN PRESS SOLID STATE

[5] MODEL FOR THE CHANNEL-IMPLANTED ENHANCEMENT-MODE IGFET [J].

ROGERS, DM ;

HAYDEN, JD ;

RINERSON, DD .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (07) :955-964

[6]

SZE SM, 1981, PHYSICS SEMICONDUCTO, P457

[7] DEVICE MODEL FOR AN ION-IMPLANTED MESFET [J].

TAYLOR, GW ;

DARLEY, HM ;

FRYE, RC ;

CHATTERJEE, PK .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (03) :172-182

[8] GRADED CHANNEL FETS - IMPROVED LINEARITY AND NOISE-FIGURE [J].

WILLIAMS, RE ;

SHAW, DW .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (06) :600-605

[9] A SIMPLE PUNCHTHROUGH VOLTAGE MODEL FOR SHORT-CHANNEL MOSFETS WITH SINGLE CHANNEL IMPLANTATION IN VLSI [J].

WU, CY ;

HSIAO, WZ ;

CHEN, HH .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (09) :1704-1707

← 1 →