A SIMPLE PUNCHTHROUGH VOLTAGE MODEL FOR SHORT-CHANNEL MOSFETS WITH SINGLE CHANNEL IMPLANTATION IN VLSI

被引：4

作者：

WU, CY ^{[1
]}

HSIAO, WZ ^{[1
]}

CHEN, HH ^{[1
]}

机构：

[1] NATL CHIAO TUNG UNIV,INST ELECTR,DEPT ELECT ENGN,HSINCHU,TAIWAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1985年 / 32卷 / 09期

关键词：

D O I：

10.1109/T-ED.1985.22183

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1704 / 1707

页数：4

共 10 条

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[6] SHORT-CHANNEL MOS-TRANSISTORS IN THE AVALANCHE-MULTIPLICATION REGIME [J].

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[8] SUB-THRESHOLD CONDUCTION IN MOSFETS [J].

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[10]

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