COMPUTER-ANALYSIS OF PUNCH-THROUGH IN MOSFETS

A two-dimensional numerical analysis is made for MOSFETs having short channel lengths. The short channel MOSFET is especially characterized by the existence of the punch-through current which cannot be explained by the one-dimensional MOSFET models. The two-dimensional analysis makes clear the following facts relating about the punch-through mechanism. The punch-through is a condition in which the depletion layers of the source and the drain connect mutually at the deep region in the substrate even in equilibrium. The punch-through current is injected through the saddle point of the intrinsic potential into the drain region by the electric field from the drain, at the low gate voltages. © 1979.