DYNAMIC OBSERVATION OF SILICON HOMOEPITAXIAL GROWTH BY HIGH-TEMPERATURE SCANNING-TUNNELING-MICROSCOPY

被引:14
作者
HASEGAWA, T
KOHNO, M
HOSAKA, S
HOSOKI, S
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1994年 / 12卷 / 03期
关键词
D O I
10.1116/1.587709
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The dynamic process of Si crystal growth on a Si(111)7X7 surface was studied in situ using high-temperature scanning tunneling microscopy. Si was evaporated onto a Si(111)7X7 surface, kept at 350-degrees-C, and the crystal growth was observed. Both step-flow growth and island growth were observed. In the step-flow growth, the [112BAR] steps became jagged with [112BAR] steps. At the [112BAR] steps, new adatoms appeared in rows along the step edges. In the island growth, the multilayer growth was observed. A rearrangement of adatoms in the first layer was observed when the second layer was formed on the first layer.
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页码:2078 / 2081
页数:4
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