DYNAMIC OBSERVATION OF SILICON HOMOEPITAXIAL GROWTH BY HIGH-TEMPERATURE SCANNING-TUNNELING-MICROSCOPY

The dynamic process of Si crystal growth on a Si(111)7X7 surface was studied in situ using high-temperature scanning tunneling microscopy. Si was evaporated onto a Si(111)7X7 surface, kept at 350-degrees-C, and the crystal growth was observed. Both step-flow growth and island growth were observed. In the step-flow growth, the [112BAR] steps became jagged with [112BAR] steps. At the [112BAR] steps, new adatoms appeared in rows along the step edges. In the island growth, the multilayer growth was observed. A rearrangement of adatoms in the first layer was observed when the second layer was formed on the first layer.