DONOR STATES IN GAAS UNDER HYDROSTATIC-PRESSURE

被引:16
作者
LIU, X
SAMUELSON, L
PISTOL, ME
GERLING, M
NILSSON, S
机构
[1] Department of Solid State Physics, University of Lund, S-221 00 Lund
来源
PHYSICAL REVIEW B | 1990年 / 42卷 / 18期
关键词
D O I
10.1103/PhysRevB.42.11791
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Spectroscopic studies have been carried out for GaAs crystals under hydrostatic pressure, intended for the investigation of effective-mass donor levels associated with different conduction-band minima and the DX center. Our results reveal the existence of three donor states appearing in the band gap. These are labeled D-GAMMA, D*, and D(X). The donor state D-GAMMA, normally observed at atmospheric pressure, successively crosses two other donor states (D* and D(X)) as the hydrostatic pressure exceeds 28 kbar. D*, in turn, crosses D(X) at pressures of about 44 kbar. From their corresponding donor-accept pair luminescence, we know that D-GAMMA and D(X) have pressure dependences that track the GAMMA- and X-band minimum, and are believed to be effective-mass donor states associated with the GAMMA- and X-band edges, respectively. The third donor state D* has a pressure dependence that does not seem to agree with any known conduction-band minimum. However, it is in many respects similar to the DX center, although it has not, in studies of radiative emission, revealed evidence of a large lattice relaxation and photoquenching effects.
引用
收藏
页码:11791 / 11800
页数:10
相关论文
共 54 条
[41]   DEEP LEVELS IN GA1-XALXAS UNDER PRESSURE [J].
SAXENA, AK .
APPLIED PHYSICS LETTERS, 1980, 36 (01) :79-81
[42]   SHALLOW AND DEEP DONORS IN DIRECT-GAP N-TYPE ALXGA1-XAS-SI GROWN BY MOLECULAR-BEAM EPITAXY [J].
SCHUBERT, EF ;
PLOOG, K .
PHYSICAL REVIEW B, 1984, 30 (12) :7021-7029
[43]   EXCITATION SPECTROSCOPY ON DONOR-ACCEPTOR PAIR LUMINESCENCE IN GAP [J].
SENSKE, W ;
STREET, RA .
PHYSICAL REVIEW B, 1979, 20 (08) :3267-3277
[44]   TE AND GE - DOPING STUDIES IN GA1-XA1XAS [J].
SPRINGTHORPE, AJ ;
KING, FD ;
BECKE, A .
JOURNAL OF ELECTRONIC MATERIALS, 1975, 4 (01) :101-118
[45]   SPECTROSCOPY OF EXCITED ACCEPTOR STATES IN GAP [J].
STREET, RA ;
SENSKE, W .
PHYSICAL REVIEW LETTERS, 1976, 37 (19) :1292-1295
[46]  
TACHIKAWA M, 1985, JPN J APPL PHYS 2, V24, pL893, DOI 10.1143/JJAP.24.L893
[47]   A SIMPLE CALCULATION OF THE DX CENTER CONCENTRATION BASED ON AN L-DONOR MODEL [J].
TACHIKAWA, M ;
MIZUTA, M ;
KUKIMOTO, H ;
MINOMURA, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (10) :L821-L823
[48]   ELECTRON LOCALIZATION BY A METASTABLE DONOR LEVEL IN N-GAAS - A NEW MECHANISM LIMITING THE FREE-CARRIER DENSITY [J].
THEIS, TN ;
MOONEY, PM ;
WRIGHT, SL .
PHYSICAL REVIEW LETTERS, 1988, 60 (04) :361-364
[49]  
THEIS TN, 1986, 18TH P INT C PHYS SE, P927
[50]   CHARACTERIZATION OF DEEP LEVELS IN MODULATION-DOPED ALGAAS/GAAS FETS [J].
VALOIS, AJ ;
ROBINSON, GY .
IEEE ELECTRON DEVICE LETTERS, 1983, 4 (10) :360-362