EFFECTS OF UNIAXIAL-STRESS ON THE CYCLOTRON-RESONANCE IN INVERSION-LAYERS ON SI(100)

被引：8

作者：

ABSTREITER, G

STALLHOFER, P

KOTTHAUS, JP

机构：

[1] UNIV HAMBURG,INST ANGEW PHYS,D-2000 HAMBURG 13,FED REP GER

[2] MAX PLANCK INST FESTKORPERFORSCH,F-38042 GRENOBLE,FRANCE

来源：

SURFACE SCIENCE | 1980年 / 98卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(80)90522-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

收藏

页码：413 / 415

页数：3

相关论文

共 13 条

[1] ABSTREITER G, 1976, PHYS REV B, V14, P2480, DOI 10.1103/PhysRevB.14.2480
[2] CYCLOTRON-RESONANCE IN 2 INTERACTING ELECTRON-SYSTEMS WITH APPLICATION TO SI INVERSION LAYERS
APPEL, J
OVERHAUSER, AW
[J]. PHYSICAL REVIEW B, 1978, 18 (02): : 758 - 767
[3] MANY-VALLEY INTERACTIONS IN N-TYPE SILICON INVERSION LAYERS
DORDA, G
EISELE, I
GESCH, H
[J]. PHYSICAL REVIEW B, 1978, 17 (04): : 1785 - 1798
[4] COMPARISON OF SHUBNIKOV-DEHAAS EFFECT AND CYCLOTRON-RESONANCE ON SI(100) MOS-TRANSISTORS UNDER UNIAXIAL-STRESS
GESCH, H
DORDA, G
STALLHOFER, P
KOTTHAUS, JP
[J]. SOLID STATE COMMUNICATIONS, 1979, 32 (07) : 543 - 546
[5] STRESS AND TEMPERATURE-DEPENDENCE OF ELECTRONIC PROPERTIES OF N-TYPE SILICON INVERSION LAYERS
KELLY, MJ
FALICOV, LM
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1977, 10 (23): : 4735 - 4752
[6] TEMPERATURE-DEPENDENT CYCLOTRON MASS OF INVERSION-LAYER ELECTRONS IN SI
KUBLBECK, H
KOTTHAUS, JP
[J]. PHYSICAL REVIEW LETTERS, 1975, 35 (15) : 1019 - 1022
[7] SURFACE CYCLOTRON-RESONANCE IN SI UNDER UNIAXIAL STRESS
STALLHOFER, P
KOTTHAUS, JP
KOCH, JF
[J]. SOLID STATE COMMUNICATIONS, 1976, 20 (05) : 519 - 522
[8] EFFECTS OF UNIAXIAL-STRESS ON THE CYCLOTRON-RESONANCE IN INVERSION LAYERS ON SI(100)
STALLHOFER, P
KOTTHAUS, JP
ABSTREITER, G
[J]. SOLID STATE COMMUNICATIONS, 1979, 32 (08) : 655 - 658
[9] EFFECT OF TEMPERATURE AND STRESS ON SURFACE CYCLOTRON-RESONANCE IN (100)SI
STALLHOFER, P
MIOSGA, H
KOTTHAUS, JP
[J]. SURFACE SCIENCE, 1978, 73 (01) : 340 - 341
[10] STALLHOFER P, UNPUBLISHED