COMPARISON OF SHUBNIKOV-DEHAAS EFFECT AND CYCLOTRON-RESONANCE ON SI(100) MOS-TRANSISTORS UNDER UNIAXIAL-STRESS

被引：6

作者：

GESCH, H ^{[1
]}

DORDA, G ^{[1
]}

STALLHOFER, P ^{[1
]}

KOTTHAUS, JP ^{[1
]}

机构：

[1] TECH UNIV MUNICH,DEPT PHYS,D-8046 GARCHING,FED REP GER

来源：

SOLID STATE COMMUNICATIONS | 1979年 / 32卷 / 07期

关键词：

D O I：

10.1016/0038-1098(79)90371-5

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The stress induced population of the non-equivalent subbands E0 to E′0 is investigated by measurements of the magnetoconductivity - the Shubnikov-de Haas oscillations - and the cyclotron resonance taken on the same MOS transistor under identical conditions. In cyclotron resonance with increasing stress, a gradual transfer of carriers from E0 to E′0 is observed, whereas the Shubnikov-de Haas periodicity is unaffected and always yields a valley degeneracy of two. A domain model is required to resolve this apparent discrepancy. © 1979.

引用

页码：543 / 546

页数：4

共 14 条

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