ULTRAHIGH AU PARA-GAAS SCHOTTKY BARRIERS DUE TO PLASMA HYDROGENATION

被引：5

作者：

ASHOK, S ^{[1
]}

WANG, YG ^{[1
]}

NAKAGAWA, OS ^{[1
]}

机构：

[1] PENN STATE UNIV,ENGN SCI PROGRAM,UNIVERSITY PK,PA 16802

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 15期

关键词：

D O I：

10.1063/1.103353

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

GaAs surface modification caused by rf plasma hydrogenation has been studied by electrical characterization of subsequently fabricated Au/GaAs Schottky barriers. While the Schottky barrier height on n-GaAs is found to reduce slightly, exceptionally high barriers have been seen for p-GaAs. The effective barrier height of Au/p-GaAs diodes increases from 0.35 eV for unhydrogenated control to 0.84 eV with plasma hydrogenation.

引用

页码：1560 / 1562

页数：3

共 12 条

[1] MODIFICATION OF SCHOTTKY BARRIERS IN SILICON BY REACTIVE ION ETCHING WITH NF3 [J].

ASHOK, S ;

CHOW, TP ;

BALIGA, BJ .

APPLIED PHYSICS LETTERS, 1983, 42 (08) :687-689

[2] INFLUENCE OF LOW-ENERGY ATOMIC-HYDROGEN ON ARGON-IMPLANTED SILICON SCHOTTKY BARRIERS [J].

ASHOK, S ;

GIEWONT, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (07) :L533-L535

[3]

Fonash S.J., 1981, SOLAR CELL DEVICE PH

[4] APPLICATION OF REACTIVE-ION-BEAM ETCHING TO RECESSED-GATE GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS [J].

IMAI, Y ;

OHWADA, K .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04) :889-893

[5] DEFECT GENERATION BY SCHOTTKY CONTACTS ON N-GAAS [J].

MEYER, E ;

HEYMANN, G .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (03) :491-496

[6] ELECTRICAL CHARACTERIZATION OF SCHOTTKY DIODES ON VERY LOW-ENERGY ION-ETCHED GAAS-SURFACES [J].

NEFFATI, T ;

LU, GN ;

BARRET, C .

SOLID-STATE ELECTRONICS, 1988, 31 (08) :1335-1342

[7] REACTIVE ION ETCHING INDUCED DAMAGE IN GAAS AND AIGAAS USING C2H6/H2/AR OR CCL2F2/O2 GAS-MIXTURES [J].

PEARTON, SJ ;

CHAKRABARTI, UK ;

HOBSON, WS .

JOURNAL OF APPLIED PHYSICS, 1989, 66 (05) :2061-2064

[8] HYDROGEN IN CRYSTALLINE SEMICONDUCTORS [J].

PEARTON, SJ ;

CORBETT, JW ;

SHI, TS .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1987, 43 (03) :153-195

[9]

Rhoderick E H., 1988, METAL SEMICONDUCTOR

[10]

RINGEL SA, 1986, J VAC SCI TECHNOL A, V4, P2388

← 1 2 →