DEFECT GENERATION BY SCHOTTKY CONTACTS ON N-GAAS

被引：8

作者：

MEYER, E

HEYMANN, G

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 03期

关键词：

D O I：

10.1116/1.584773

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：491 / 496

页数：6

共 35 条

[1] DAMAGE RELATED DEEP ELECTRON LEVELS IN ION-IMPLANTED GAAS [J].

ALLSOPP, DWE ;

PEAKER, AR .

SOLID-STATE ELECTRONICS, 1986, 29 (04) :467-470

[2] STOICHIOMETRY CHANGES IN III-V COMPOUNDS UNDER ION-BOMBARDMENT [J].

BARCZ, A ;

BUGAJSKI, M ;

CROSET, M ;

MERCANDALLI, LM .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 209 (MAY) :621-627

[3] TRAP DISTRIBUTION IN GOLD-REFRACTORY GAAS SCHOTTKY BARRIERS [J].

CHRISTOU, A ;

ANDERSON, WT ;

DAY, HM .

SOLID-STATE ELECTRONICS, 1985, 28 (04) :329-338

[4] TIW SILICIDE-GATE TECHNOLOGY FOR SELF-ALIGNED GAAS-FET [J].

GILL, SS ;

PRYCE, GJ ;

WOODWARD, J .

PHYSICA B & C, 1985, 129 (1-3) :430-434

[5] REDUCTION OF SCHOTTKY-BARRIER HEIGHTS BY SURFACE OXIDATION OF GAAS AND ITS INFLUENCE ON DLTS SIGNALS FOR THE MIDGAP LEVEL EL2 [J].

HASEGAWA, F ;

ONOMURA, M ;

MOGI, C ;

NANNICHI, Y .

SOLID-STATE ELECTRONICS, 1988, 31 (02) :223-228

[6] ION-BEAM CONTACTING OF SILICON .1. ALUMINUM IN PARA-SILICON [J].

KLOSE, H ;

MERTENS, A ;

REETZ, R ;

TANG, N .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1983, 77 (01) :233-239

[7] ION-CLEANING DAMAGE IN(100) GAAS, AND ITS EFFECT ON SCHOTTKY DIODES [J].

KWAN, P ;

BHAT, KN ;

BORREGO, JM ;

GHANDHI, SK .

SOLID-STATE ELECTRONICS, 1983, 26 (02) :125-129

[8] ORIGIN OF THE 0.82-EV ELECTRON TRAP IN GAAS AND ITS ANNIHILATION BY SHALLOW DONORS [J].

LAGOWSKI, J ;

GATOS, HC ;

PARSEY, JM ;

WADA, K ;

KAMINSKA, M ;

WALUKIEWICZ, W .

APPLIED PHYSICS LETTERS, 1982, 40 (04) :342-344

[9]

Lang D. V., 1977, I PHYS C SER, V31, P70

[10] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J].

LANG, DV .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3023-3032

← 1 2 3 4 →