IMPACT IONIZATION IN P-TYPE INSB

被引：2

作者：

DICK, CL

ANCKERJO.B

机构：

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1971年 / 32卷 / 09期

关键词：

D O I：

10.1016/S0022-3697(71)80393-1

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：2151 / &

共 29 条

[1]

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[3] TRANSIENT HIGH-DENSITY INJECTION IN A SEMICONDUCTOR WITH TRAPS [J].

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[4] LOW FIELD INJECTION IN N-INSB [J].

ANCKERJOHNSON, B ;

DICK, CL .

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[5] AVALANCHE PLASMA PRODUCTION AND INSTABILITIES ON SUBNANOSECOND TIME SCALES .2. [J].

ANCKERJOHNSON, B .

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[6] IMPACT IONIZATION WAVEFRONT IN PARA-INSB [J].

ANCKERJOHNSON, B ;

DICK, CL .

SOLID STATE COMMUNICATIONS, 1971, 9 (02) :125-+

[7]

ANCKERJOHNSON B, 1968, P INT C PHYS SEMICON, P813

[8]

ANCKERJOHNSON B, 1966, SEMICONDUCT SEMIMET, V1, P379

[9]

ANKERJOHNSON B, 1961, PHYS REV, V124, P1745

[10] HOT-ELECTRON EMISSION FROM SHALLO P-N JUNCTIONS IN SILICON [J].

BARTELINK, D ;

MOLL, JL ;

MEYER, NI .

PHYSICAL REVIEW, 1963, 130 (03) :972-+

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