POLYMERIC RESISTS FOR X-RAY LITHOGRAPHY

被引：53

作者：

THOMPSON, LF ^{[1
]}

FEIT, ED ^{[1
]}

BOWDEN, MJ ^{[1
]}

LENZO, PV ^{[1
]}

SPENCER, EG ^{[1
]}

机构：

[1] BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1974年 / 121卷 / 11期

关键词：

D O I：

10.1149/1.2401718

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1500 / 1503

页数：4

共 18 条

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[3]

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[4]

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[6] FUNDAMENTAL ASPECTS OF ELECTRON-BEAM LITHOGRAPHY .1. DEPTH-DOSE RESPONSE OF POLYMERIC ELECTRON-BEAM RESISTS [J].

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[7] EPOXIDE-CONTAINING POLYMERS AS HIGHLY SENSITIVE ELECTRON-BEAM RESISTS [J].

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[8]

KAELBLE EF, 1967, HDB XRAYS, P1

[9] HIGH-SPEED LOW-POWER X-RAY LITHOGRAPHY [J].

LENZO, PV ;

SPENCER, EG .

APPLIED PHYSICS LETTERS, 1974, 24 (06) :289-291

[10] ELECTROCHEMICALL THINNED N/N+ EPITAXIAL SILICON - METHOD AND APPLICATIONS [J].

MEEK, RL .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (07) :1240-+

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