ROOM-TEMPERATURE ELECTROLUMINESCENCE AT WAVELENGTHS OF 5-7-MU-M FROM HGCDTE HETEROSTRUCTURE DIODES

被引：20

作者：

ASHLEY, T

ELLIOTT, CT

GORDON, NR

HALL, RS

MAXEY, CD

MATTHEWS, BE

机构：

[1] ROYAL SIGNALS & RADAR ESTAB,DEF RES AGCY,MALVERN WR14 3PS,WORCS,ENGLAND

[2] GEC LTD,MARCONI INFRARED LTD,MILLBROOK IND ESTATE,SOUTHAMPTON SO15 0EG,HANTS,ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 18期

关键词：

D O I：

10.1063/1.112728

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Room-temperature electroluminescence at peak wavelengths of 5-7 mu m has been observed in metalorganic vapor phase epitaxy-grown mercury cadmium telluride, fully impurity doped, heterostructure, mesa diodes. The internal quantum efficiency at low injection for 5 mu m emission is around 4X10(-4). Maximum output power at 295 K is 6 nW from an 80 mu m diameter device (120 mu W Cm-2) at 50% duty cycle. The dependence of intensity on current, the emission spectra, and an infrared microscope image of the emission are presented. (C) 1994 American Institute of Physics.

引用

页码：2314 / 2316

页数：3

共 14 条

[1] HGCDTE INFRARED DIODE-LASERS GROWN BY MBE [J].

ARIAS, JM ;

ZANDIAN, M ;

ZUCCA, R ;

SINGH, J .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (01) :S255-S260

[2] NONEQUILIBRIUM DEVICES FOR INFRARED DETECTION [J].

ASHLEY, T ;

ELLIOTT, CT .

ELECTRONICS LETTERS, 1985, 21 (10) :451-452

[3] UNCOOLED INSB/IN1-XALXSB MIDINFRARED EMITTER [J].

ASHLEY, T ;

ELLIOTT, CT ;

GORDON, NT ;

HALL, RS ;

JOHNSON, AD ;

PRYCE, GJ .

APPLIED PHYSICS LETTERS, 1994, 64 (18) :2433-2435

[4]

ASHLEY T, UNPUB

[5] NEGATIVE LUMINESCENCE OF SEMICONDUCTORS [J].

BERDAHL, P ;

MALYUTENKO, V ;

MORIMOTO, T .

INFRARED PHYSICS, 1989, 29 (2-4) :667-672

[6]

BOLGOV SS, 1993, SEMICONDUCTORS+, V27, P93

[7]

BOLGOV SS, 1991, SOV TECH PHYS LETT, V15, P641

[8] LOW-THRESHOLD INJECTION-LASER IN HGCDTE [J].

BOUCHUT, P ;

DESTEFANIS, G ;

MILLION, A ;

COLIN, T ;

BABLET, J .

JOURNAL OF ELECTRONIC MATERIALS, 1993, 22 (08) :1061-1065

[9] INASSB LIGHT-EMITTING-DIODES AND THEIR APPLICATIONS TO INFRARED GAS SENSORS [J].

DOBBELAERE, W ;

DEBOECK, J ;

BRUYNSERAEDE, C ;

MERTENS, R ;

BORGHS, G .

ELECTRONICS LETTERS, 1993, 29 (10) :890-891

[10] RADIATIVE LIFETIME IN SEMICONDUCTORS FOR INFRARED DETECTION [J].

HUMPHREYS, RG .

INFRARED PHYSICS, 1986, 26 (06) :337-342

← 1 2 →