RAPID CONTACTLESS ELECTRICAL CHARACTERIZATION OF PROCESS-INDUCED DAMAGE IN HGCDTE

被引：2

作者：

ELKIND, J

CHEN, MC

机构：

[1] Central Research Laboratories, Texas Instruments Inc., Dallas

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1990年 / 8卷 / 02期

关键词：

D O I：

10.1116/1.576975

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Microwave reflectance measurements of minority carrier lifetime and eddy-current measurements of conductivity are proposed as rapid, contactless electrical characterization methods for the detection and tracking of process-induced damage in HgCdTe. Changes induced in HgCdTe by ion milling are used to illustrate the utility of the proposed methods. © 1990, American Vacuum Society. All rights reserved.

引用

页码：1139 / 1142

页数：4

共 12 条

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