REACTION OF MO THIN-FILMS ON SI (100) SURFACES

被引：50

作者：

YANAGISAWA, S

FUKUYAMA, T

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1980年 / 127卷 / 05期

关键词：

D O I：

10.1149/1.2129837

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1150 / 1156

页数：7

共 23 条

[11] FABRICATION AND THERMAL-STABILITY OF W-SI OHMIC CONTACTS [J].

KUMAR, V .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (02) :262-269

[12] REACTION-KINETICS OF TUNGSTEN THIN-FILMS ON SILICON (100) SURFACES [J].

LOCKER, LD ;

CAPIO, CD .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (10) :4366-4369

[13] EFFECTS OF DEPOSITION PARAMETERS ON PROPERTIES OF RF SPUTTERED MOLYBDENUM FILMS [J].

NOWICKI, RS ;

BUCKLEY, WD ;

MACKINTOSH, WD ;

MITCHELL, IV .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1974, 11 (04) :675-679

[14] SILICIDE FORMATION IN THIN MOLYBDENUM AND TUNGSTEN FILMS ON SINGLE-CRYSTAL SILICON SUBSTRATES AT RELATIVELY LOW-TEMPERATURES [J].

OERTEL, B ;

SPERLING, R .

THIN SOLID FILMS, 1976, 37 (02) :185-194

[15] MOLYBDENUM GATE MOS APPLIED TO AN AM-FM DIGITAL FREQUENCY-SYNTHESIZER [J].

OHGISHI, T ;

DOI, A ;

AKIYAMA, T ;

ENOMOTO, N .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1978, 13 (05) :555-560

[16] EFFECT OF HEAT-TREATMENT AFTER DEPOSITION ON INTERNAL-STRESS IN MOLYBDENUM FILMS ON SIO2-SI SUBSTRATES [J].

OIKAWA, H ;

NAKAJIMA, Y .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (05) :1153-1156

[17] ELECTRICAL-RESISTIVITY OF VACUUM-DEPOSITED MOLYBDENUM FILMS [J].

OIKAWA, H .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (03) :1117-1122

[18]

Shaffer, 1964, PLENUM PRESS HDB HIG

[19] REFRACTORY-METAL GATE PROCESSES FOR VLSI APPLICATIONS [J].

SHAH, PL .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) :631-640

[20] THERMAL-STRESSES AND CRACKING RESISTANCE OF DIELECTRIC FILMS (SIN, SI3N4, AND SIO2) ON SI SUBSTRATES [J].

SINHA, AK ;

LEVINSTEIN, HJ ;

SMITH, TE .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (04) :2423-2426

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