MORPHOLOGY AND ELECTRONIC-PROPERTIES OF PHOSPHORUS-DOPED HYDROGENATED AMORPHOUS AND MICROCRYSTALLINE SILICON DEPOSITED BY DC DISCHARGE IN SIH4/PH3

被引：5

作者：

KRUZELECKY, RV ^{[1
]}

ZUKOTYNSKI, S ^{[1
]}

PERZ, JM ^{[1
]}

机构：

[1] UNIV TORONTO,DEPT PHYS,TORONTO M5S 1A4,ONTARIO,CANADA

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1988年 / 103卷 / 2-3期

关键词：

DISCHARGE CURRENT DENSITY - NUCLEATION DENSITY;

D O I：

10.1016/0022-3093(88)90201-3

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：221 / 233

页数：13

共 23 条

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[4]

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[7] VIBRATIONAL SPECTROSCOPY OF HYDROGENATED EVAPORATED AMORPHOUS-SILICON FILMS [J].

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[8] GROWTH-MORPHOLOGY AND DEFECTS IN PLASMA-DEPOSITED A-SI-H FILMS [J].

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[9]

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[10]

KNIGHTS JC, 1977, PHYS REV LETT, V34, P712

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