INVESTIGATION OF INJECTION MECHANISMS FOR INGAAS/INP DOUBLE HETEROSTRUCTURE BIPOLAR-TRANSISTORS

被引：6

作者：

ELSHABINIRIAD, A

HE, JQ

机构：

来源：

SOLID-STATE ELECTRONICS | 1989年 / 32卷 / 10期

关键词：

D O I：

10.1016/0038-1101(89)90062-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：853 / 860

页数：8

共 18 条

[1] INVESTIGATION OF IN0.53GA0.47AS FOR HIGH-FREQUENCY MICROWAVE-POWER FETS [J].

CHAI, YG ;

YUEN, C ;

ZDASIUK, GA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (05) :972-977

[2] CURRENT TRANSPORT OVER PARABOLIC POTENTIAL BARRIERS IN SEMICONDUCTOR-DEVICES [J].

CROWELL, CR ;

HAFIZI, M .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (07) :1087-1095

[3] DEEP LEVELS IN IN0.53GA0.47AS/INP HETEROSTRUCTURES [J].

FORREST, SR ;

KIM, OK .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (08) :5738-5745

[4] ANALYSIS OF THE DARK CURRENT AND PHOTORESPONSE OF IN0.53GA0.47AS/INP AVALANCHE PHOTO-DIODES [J].

FORREST, SR ;

KIM, OK ;

SMITH, RG .

SOLID-STATE ELECTRONICS, 1983, 26 (10) :951-968

[5] INTERFACE PROPERTIES OF METAL-OXIDE SEMICONDUCTOR AND METAL-INSULATOR SEMICONDUCTOR STRUCTURES ON GA1-XINXAS WITH X = 0.35 AND 0.10 [J].

GOURRIER, S ;

FRIEDEL, P ;

CHANE, JP .

THIN SOLID FILMS, 1983, 103 (1-2) :155-166

[6] AN INVESTIGATION OF THE EFFECT OF GRADED LAYERS AND TUNNELING ON THE PERFORMANCE OF ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

GRINBERG, AA ;

SHUR, MS ;

FISCHER, RJ ;

MORKOC, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (12) :1758-1765

[7] HETEROSTRUCTURE BIPOLAR-TRANSISTORS AND INTEGRATED-CIRCUITS [J].

KROEMER, H .

PROCEEDINGS OF THE IEEE, 1982, 70 (01) :13-25

[8] CURRENT TRANSPORT ACROSS THE EMITTER-BASE POTENTIAL SPIKE IN ALGAAS-GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

LEE, SC ;

KAU, JN ;

LIN, HH .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (02) :890-895

[9] TRANSPORT-THEORY OF THE DOUBLE HETEROJUNCTION BIPOLAR-TRANSISTOR BASED ON CURRENT BALANCING CONCEPT [J].

LEE, SC ;

LIN, HH .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (05) :1688-1695

[10]

LEE SC, 1986, J APPL PHYS, V9, P1688

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