SI/GEXSI1-X/SI RESONANT TUNNELING DIODE DOPED BY THERMAL BORON SOURCE

被引：14

作者：

RHEE, SS

KARUNASIRI, RPG

CHERN, CH

PARK, JS

WANG, KL

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 02期

关键词：

D O I：

10.1116/1.584743

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：327 / 331

页数：5

共 20 条

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ALLEN, FG .

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BEAN, JC .

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[15]

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[17]

SZE SM, 1981, PHYS SEMICONDUCTOR D, P850

[18] BORON HEAVY DOPING FOR SI MOLECULAR-BEAM EPITAXY USING A HBO2 SOURCE [J].

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[19] THEORETICAL-STUDY OF SI/GE INTERFACES [J].

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[20]

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