SOME OBSERVATIONS ON DISLOCATION ETCHING OF GAAS1-XPX EPITAXIAL LAYERS

被引：8

作者：

STEWART, CEE

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1971年 / 8卷 / 03期

关键词：

D O I：

10.1016/0022-0248(71)90068-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

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页码：269 / &

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[8]

WILLIAMS FV, 1967, T METALL SOC AIME, V239, P702