EFFECT OF SUBSTRATE-TEMPERATURE ON RECRYSTALLIZATION OF PLASMA CHEMICAL VAPOR-DEPOSITION AMORPHOUS-SILICON FILMS

被引：72

作者：

NAKAZAWA, K

TANAKA, K

机构：

[1] NTT Applied Electronics Laboratories, Musashino-shi, Tokyo 180, 3-9-11, Midori-cho

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 68卷 / 03期

关键词：

D O I：

10.1063/1.346740

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of substrate temperature on the recrystallization of plasma chemical vapor deposition amorphous silicon films is investigated. The grain size of polycrystalline silicon films recrystallized at 600°C increases as the substrate temperature decreases. The enlargement in the grain size is attributed to the decrease in the nucleation rate. The nucleation rate is suppressed by an increase in structural disorder of the Si network. Electrical properties of recrystallized films are improved by the increase in the grain size.

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页码：1029 / 1032

页数：4

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