ELECTRICAL CHARACTERIZATION OF MICRO DEFECTS IN SILICON CRYSTAL

[1] DEGRADATION OF CARRIER LIFETIME IN SILICON-CRYSTALS AT ROOM-TEMPERATURE [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1978, 49 (01): : 137 - 144

[2] NONDESTRUCTIVE METHOD FOR MEASURING THE SPATIAL-DISTRIBUTION OF MINORITY-CARRIER LIFETIME IN SILICON WAFER [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (11) : 2171 - 2172

[3] EFFECT OF STACKING-FAULTS ON CARRIER GENERATION IN A SILICON DEPLETION LAYER [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (12) : 2167 - 2168

[4] ELECTRICALLY ACTIVE STACKING FAULTS IN SILICON. [J]. Journal of the Electrochemical Society, 1973, 120 (04) : 533 - 541

[5] TAKAOKA H, 1979, JAPAN J APPL PHY S18, V18, P179

[6] EFFECT OF SWIRL DEFECTS ON MINORITY-CARRIER LIFETIME IN HEAT-TREATED SILICON-CRYSTALS [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1977, 10 (06) : 899 - 910

[7] USAMI A, 1977, J PHYS D, V10, P63

[1] DEGRADATION OF CARRIER LIFETIME IN SILICON-CRYSTALS AT ROOM-TEMPERATURE [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1978, 49 (01): : 137 - 144

[2] NONDESTRUCTIVE METHOD FOR MEASURING THE SPATIAL-DISTRIBUTION OF MINORITY-CARRIER LIFETIME IN SILICON WAFER [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (11) : 2171 - 2172

[3] EFFECT OF STACKING-FAULTS ON CARRIER GENERATION IN A SILICON DEPLETION LAYER [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (12) : 2167 - 2168

[4] ELECTRICALLY ACTIVE STACKING FAULTS IN SILICON. [J]. Journal of the Electrochemical Society, 1973, 120 (04) : 533 - 541

[5] TAKAOKA H, 1979, JAPAN J APPL PHY S18, V18, P179

[6] EFFECT OF SWIRL DEFECTS ON MINORITY-CARRIER LIFETIME IN HEAT-TREATED SILICON-CRYSTALS [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1977, 10 (06) : 899 - 910

[7] USAMI A, 1977, J PHYS D, V10, P63