CHAMBER MATERIAL EFFECTS ON ACTINOMETRIC MEASUREMENTS IN RF GLOW-DISCHARGES

被引:6
作者
COTLER, TJ
PASSOW, ML
FOURNIER, JP
BRAKE, ML
ELTA, ME
机构
[1] UNIV MICHIGAN,DEPT NUCL ENGN,ANN ARBOR,MI 48109
[2] UNIV MICHIGAN,DEPT ELECT ENGN & COMP SCI,SOLID STATE ELECTR LAB,ANN ARBOR,MI 48109
关键词
D O I
10.1063/1.348597
中图分类号
O59 [应用物理学];
学科分类号
摘要
The relative concentration of atomic fluroine was measured in a CF4 rf glow discharge using the actinometric technique. The dependence of fluorine concentration on power, pressure and flow are presented and shown to be dependent upon reactor wall material and electrode material.
引用
收藏
页码:2885 / 2888
页数:4
相关论文
共 13 条
[1]   OPTICAL-EMISSION SPECTROSCOPY OF REACTIVE PLASMAS - A METHOD FOR CORRELATING EMISSION INTENSITIES TO REACTIVE PARTICLE DENSITY [J].
COBURN, JW ;
CHEN, M .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) :3134-3136
[2]   DEPENDENCE OF F-ATOM DENSITY ON PRESSURE AND FLOW-RATE IN CF4 GLOW-DISCHARGES AS DETERMINED BY EMISSION-SPECTROSCOPY [J].
COBURN, JW ;
CHEN, M .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (02) :353-356
[3]   SPECTROSCOPIC DIAGNOSTICS OF CF4-O2 PLASMAS DURING SI AND SIO2 ETCHING PROCESSES [J].
DAGOSTINO, R ;
CRAMAROSSA, F ;
DEBENEDICTIS, S ;
FERRARO, G .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (03) :1259-1265
[4]   ON THE USE OF ACTINOMETRIC EMISSION-SPECTROSCOPY IN SF6-O2 RADIOFREQUENCY DISCHARGES - THEORETICAL AND EXPERIMENTAL-ANALYSIS [J].
DAGOSTINO, R ;
CRAMAROSSA, F ;
DEBENEDICTIS, S ;
FRACASSI, F ;
LASKA, L ;
MASEK, K .
PLASMA CHEMISTRY AND PLASMA PROCESSING, 1985, 5 (03) :239-253
[5]   ANISOTROPIC ETCHING OF SIO2 IN LOW-FREQUENCY CF4/O2 AND NF3/AR PLASMAS [J].
DONNELLY, VM ;
FLAMM, DL ;
DAUTREMONTSMITH, WC ;
WERDER, DJ .
JOURNAL OF APPLIED PHYSICS, 1984, 55 (01) :242-252
[6]   COMPUTER-SIMULATION OF A CF4 PLASMA-ETCHING SILICON [J].
EDELSON, D ;
FLAMM, DL .
JOURNAL OF APPLIED PHYSICS, 1984, 56 (05) :1522-1531
[7]  
FLAMM DL, 1979, SOLID STATE TECHNOL, V21, P109
[8]   OPTICAL-EMISSION ACTINOMETRY AND SPECTRAL-LINE SHAPES IN RF GLOW-DISCHARGES [J].
GOTTSCHO, RA ;
DONNELLY, VM .
JOURNAL OF APPLIED PHYSICS, 1984, 56 (02) :245-250
[9]   A MODEL OF THE CHEMICAL PROCESSES OCCURRING IN CF-4/O2 DISCHARGES USED IN PLASMA-ETCHING [J].
PLUMB, IC ;
RYAN, KR .
PLASMA CHEMISTRY AND PLASMA PROCESSING, 1986, 6 (03) :205-230
[10]   GAS-PHASE REACTIONS OF CF3 AND CF2 WITH ATOMIC AND MOLECULAR FLUORINE - THEIR SIGNIFICANCE IN PLASMA-ETCHING [J].
PLUMB, IC ;
RYAN, KR .
PLASMA CHEMISTRY AND PLASMA PROCESSING, 1986, 6 (01) :11-25