CARRIER CONCENTRATION PROFILES IN SI-DOPED LIQUID-PHASE EPITAXIAL GA1-XALXAS

被引：5

作者：

JOHNSON, WJ ^{[1
]}

RADO, WG ^{[1
]}

CRAWLEY, RL ^{[1
]}

AMEY, JE ^{[1
]}

机构：

[1] FORD MOTOR CO,SCI RES STAFF,DEARBORN,MI 48121

来源：

JOURNAL OF APPLIED PHYSICS | 1973年 / 44卷 / 03期

关键词：

D O I：

10.1063/1.1662346

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1311 / 1315

页数：5

共 10 条

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[7] SILICON IN LPE-GROWN GA1-XALXAS - EFFECT OF ARSENIC SOLUTION CONCENTRATION [J].

RADO, WG ;

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[8] EFFECT OF ALUMINUM ON AMPHOTERIC BEHAVIOR OF SILICON IN GA1-XALXAS [J].

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[9] SILICON-DOPED GALLIUM ARSENIDE GROWN FROM GALLIUM SOLUTION - SILICON SITE DISTRIBUTION [J].

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[10]

SZE SM, 1969, PHYSICS SEMICONDUCTO, P90

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