DETERMINATION OF THE POWER AND CURRENT DENSITIES IN ARGON AND OXYGEN PLASMAS BY INSITU TEMPERATURE-MEASUREMENTS

被引：54

作者：

VISSER, RJ

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 1989年 / 7卷 / 02期

关键词：

D O I：

10.1116/1.575750

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：189 / 194

页数：6

共 23 条

[1] Bird R.B., 2006, TRANSPORT PHENOMENA
[2] TEMPERATURE-MEASUREMENTS OF GLASS SUBSTRATES DURING PLASMA-ETCHING
BOND, RA
DZIOBA, S
NAGUIB, HM
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (02): : 335 - 338
[3] Chapman B., 1980, GLOW DISCHARGE PROCE
[4] THERMAL CONTACT CONDUCTANCE
COOPER, MG
MIKIC, BB
YOVANOVI.MM
[J]. INTERNATIONAL JOURNAL OF HEAT AND MASS TRANSFER, 1969, 12 (03) : 279 - &
[5] MICROWAVE SPECTROSCOPIC MEASUREMENT OF THE ELECTRON-DENSITY IN A PLANAR DISCHARGE - RELATION TO REACTIVE-ION ETCHING OF SILICON-OXIDE
DEVRIES, OAM
VANROOSMALEN, AJ
PUYLAERT, GCC
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (09) : 4386 - 4390
[6] EGGERTON EJ, 1982, SOLID STATE TECHNOL, V85, P84
[7] TRUE SURFACE-TEMPERATURE OF A SILICON WAFER AND THE RELATED ETCH RATE IN A CF4 PLASMA
EISELE, KM
[J]. REVUE DE PHYSIQUE APPLIQUEE, 1978, 13 (12): : 701 - 703
[8] INSITU SILICON-WAFER TEMPERATURE-MEASUREMENTS DURING RF ARGON-ION PLASMA-ETCHING VIA FLUOROPTIC THERMOMETRY
HUSSLA, I
ENKE, K
GRUNWALD, H
LORENZ, G
STOLL, H
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1987, 20 (07) : 889 - 896
[9] KALTER H, 1985, P INT S PLASMA CHEM, V7, P1061
[10] KOHLER K, 1985, J APPL PHYS, V57, P59, DOI 10.1063/1.335396