USING THERMALLY STIMULATED CURRENTS TO VISUALIZE DEFECT CLUSTERS IN NEUTRON-IRRADIATED SILICON

被引：12

作者：

BRUZZI, M

BORCHI, E

BALDINI, A

机构：

[1] Dipartimento di Energetica, Università di Firenze, 50139 Firenze, Via di Santa Marta

来源：

JOURNAL OF APPLIED PHYSICS | 1992年 / 72卷 / 09期

关键词：

D O I：

10.1063/1.352253

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Silicon p+n junctions irradiated with fast-neutron fluences (5 X 10(11) -5 X 10(13) neutrons/cm2) have been experimentally measured using the thermally stimulated current technique. When forward filling voltages are applied, a new peak is found in samples irradiated with fluences greater than 5.6 x 10(11). A cluster model has been developed to describe the new peak and the cluster's dimensions and defect concentrations have been evaluated.

引用

页码：4007 / 4013

页数：7

共 19 条

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