RELAXATION OF INTERFACE STATES AND POSITIVE CHARGE IN THIN GATE OXIDE AFTER FOWLER-NORDHEIM STRESS

被引：4

作者：

ELHDIY, A ^{[1
]}

SALACE, G ^{[1
]}

PETIT, C ^{[1
]}

JOURDAIN, M ^{[1
]}

MEINERTZHAGEN, A ^{[1
]}

机构：

[1] UFR SCI,APPLICAT MICROELECTR LAB,F-51062 REIMS,FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 73卷 / 07期

关键词：

D O I：

10.1063/1.352911

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Fowler-Nordheim (F.N.) tunneling of electrons from the gate into thin thermally grown SiO2 under high electrical field stress has been performed with polycrystalline Si-SiO2-Si capacitors and relaxation of both interface state densities and flat-band voltage investigated during several months after F.N. stress at room temperature. It has been found that the relaxation behavior of surface states and positive charge densities follow fractional power laws in time.

引用

页码：3569 / 3570

页数：2

共 18 条

[1] DESCRIPTION OF SIO2-SI INTERFACE PROPERTIES BY MEANS OF VERY LOW FREQUENCY MOS CAPACITANCE MEASUREMENTS [J].