SYNTHESIS OF BETA-SIC LAYER IN SILICON BY CARBON ION HOT IMPLANTATION

被引：14

作者：

DEGUCHI, M ^{[1
]}

KITABATAKE, M ^{[1
]}

HIRAO, T ^{[1
]}

ARAI, N ^{[1
]}

IZUMI, T ^{[1
]}

机构：

[1] TOKAI UNIV,FAC ENGN,DEPT ELECTR,HIRATSUKA,KANAGAWA 259,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1992年 / 31卷 / 2A期

关键词：

ION IMPLANTATION; HOT IMPLANTATION; CARBON ION; BETA-SIC; BURIED LAYER;

D O I：

10.1143/JJAP.31.343

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A beta-SiC layer was prepared by the carbon ion implantation technique into silicon substrates heated up to 450-degrees-C with annealing treatment. The carbon ion was implanted at an energy of 30 keV and dose in the range of 1-5 x 10(17) ions/cm2. beta-SiC grains, whose size was 100-500 angstrom, were observed in the implanted layer after annealing at 1200-degrees-C, by cross-sectional transmission electron microscopy. The dependence of substrate temperature, carbon ion dose, and annealing temperature on SiC formation was investigated by infrared absorption, electron spin resonance, and Auger electron spectroscopies. 'Hot' implantation, which is a method of heating the substrate during carbon ion implantation, was effective for enhancing the formation of Si-C bonds.

引用

页码：343 / 347

页数：5

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