X-RAY-DIFFRACTION TOPOGRAPHS OF SILICON CRYSTALS WITH SUPERPOSED OXIDE FILM .2. PENDELLOSUNG FRINGES - COMPARISON OF EXPERIMENT WITH THEORY

被引：58

作者：

PATEL, JR

KATO, N

机构：

[1] BELL TEL LABS,MURRAY HILL,NJ 07974

[2] NAGOYA UNIV,FAC ENGN,DEPT APPL PHYS,NAGOYA,JAPAN

来源：

关键词：

D O I：

10.1063/1.1662380

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：971 / 977

页数：7

共 16 条

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[12]

KATO N, 1973, J APPL PHYS, V44

LANG, AR .

[14]

PATEL JR, 1973, J APPL PHYS, V44, P965

[15] X-RAY STRESS TOPOGRAPHY OF THIN FILMS ON GERMANIUM AND SILICON [J].

SCHWUTTK.GH ;

HOWARD, JK .

[16] RESIDUAL STRESSES AT AN OXIDE-SILICON INTERFACE [J].

WHELAN, MV ;

GOEMANS, AH ;

GOOSSENS, LM .