THERMAL-DEGRADATION OF TISI2/POLY-SI GATE ELECTRODES

[1] 1 MU-M MOSFET VLSI TECHNOLOGY .7. METAL SILICIDE INTERCONNECTION TECHNOLOGY - FUTURE PERSPECTIVE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 369 - 371

[2] A NEW MOSI2/THIN POLY-SI GATE PROCESS TECHNOLOGY WITHOUT DIELECTRIC DEGRADATION OF A GATE OXIDE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (10) : 1432 - 1439

[3] ELECTRICAL-PROPERTIES OF COMPOSITE EVAPORATED SILICIDE POLYSILICON ELECTRODES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (06) : 1307 - 1312

[4] MARCUS RB, 1983, TRANSMISSION ELECTRO

[5] Massalski T.B., 1986, BINARY ALLOY PHASE D, V2

[6] SILICIDE FORMATION IN THIN CO-SPUTTERED (TITANIUM + SILICON) FILMS ON POLYCRYSTALLINE SILICON AND SIO2 [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) : 350 - 356

[7] NYGREN S, 1984, 14TH P EUR SOL STAT, P389

[8] MORPHOLOGICAL DEGRADATION OF TISI2 ON (100)SILICON [J]. APPLIED PHYSICS LETTERS, 1986, 48 (23) : 1591 - 1593

[9] AN OPTIMALLY DESIGNED PROCESS FOR SUBMICROMETER MOSFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) : 531 - 535

[10] HIGH-TEMPERATURE PROCESS LIMITATION ON TISI2 [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (12) : 2621 - 2625

[1] 1 MU-M MOSFET VLSI TECHNOLOGY .7. METAL SILICIDE INTERCONNECTION TECHNOLOGY - FUTURE PERSPECTIVE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 369 - 371

[2] A NEW MOSI2/THIN POLY-SI GATE PROCESS TECHNOLOGY WITHOUT DIELECTRIC DEGRADATION OF A GATE OXIDE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (10) : 1432 - 1439

[3] ELECTRICAL-PROPERTIES OF COMPOSITE EVAPORATED SILICIDE POLYSILICON ELECTRODES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (06) : 1307 - 1312

[4] MARCUS RB, 1983, TRANSMISSION ELECTRO

[5] Massalski T.B., 1986, BINARY ALLOY PHASE D, V2

[6] SILICIDE FORMATION IN THIN CO-SPUTTERED (TITANIUM + SILICON) FILMS ON POLYCRYSTALLINE SILICON AND SIO2 [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) : 350 - 356

[7] NYGREN S, 1984, 14TH P EUR SOL STAT, P389

[8] MORPHOLOGICAL DEGRADATION OF TISI2 ON (100)SILICON [J]. APPLIED PHYSICS LETTERS, 1986, 48 (23) : 1591 - 1593

[9] AN OPTIMALLY DESIGNED PROCESS FOR SUBMICROMETER MOSFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) : 531 - 535

[10] HIGH-TEMPERATURE PROCESS LIMITATION ON TISI2 [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (12) : 2621 - 2625