ORIGIN AND PROPERTIES OF INTERFACE STATES AT INSULATOR SEMICONDUCTOR AND SEMICONDUCTOR SEMICONDUCTOR INTERFACES OF COMPOUND SEMICONDUCTORS

被引：16

作者：

HASEGAWA, H

OHNO, H

ISHII, H

HAGA, T

ABE, Y

TAKAHASHI, H

机构：

[1] HOKKAIDO UNIV, FAC ENGN, DEPT NUCL ENGN, SAPPORO, HOKKAIDO 060, JAPAN

[2] HOKKAIDO UNIV, FAC ENGN, DEPT MET ENGN, SAPPORO, HOKKAIDO 060, JAPAN

来源：

APPLIED SURFACE SCIENCE | 1989年 / 41-2卷

关键词：

D O I：

10.1016/0169-4332(89)90087-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Electrical characterization reveals several salient common electronic features of insulator-semiconductor (I-S) and semiconductor-semiconductor (S-S) interfaces. Currently available models on the origin of states (defect model, DIGS model, effective workfunction model) are compared in their capabilities of explaining these features. The DIGS (disorder-induced gap state) model is shown to possess maximum capability and consistency. Study of the microstructure of interface by cross-sectional TEM and RBS techniques revealed a strong correlation between lattice disorder and interface state density, and supports the DIGS model. © 1989.

引用

页码：372 / 382

页数：11

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