ORIGIN AND PROPERTIES OF INTERFACE STATES AT INSULATOR SEMICONDUCTOR AND SEMICONDUCTOR SEMICONDUCTOR INTERFACES OF COMPOUND SEMICONDUCTORS

Electrical characterization reveals several salient common electronic features of insulator-semiconductor (I-S) and semiconductor-semiconductor (S-S) interfaces. Currently available models on the origin of states (defect model, DIGS model, effective workfunction model) are compared in their capabilities of explaining these features. The DIGS (disorder-induced gap state) model is shown to possess maximum capability and consistency. Study of the microstructure of interface by cross-sectional TEM and RBS techniques revealed a strong correlation between lattice disorder and interface state density, and supports the DIGS model. © 1989.