PROTON IMPLANTATION INTERMIXING OF GAAS/ALGAAS QUANTUM-WELLS

被引：27

作者：

REDINBO, GF

CRAIGHEAD, HG

HONG, JMH

机构：

[1] CORNELL UNIV,NATL NANOFABRICAT FACIL,ITHACA,NY 14853

[2] IBM CORP,THOMAS J WATSON RES CTR,DIV RES,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 74卷 / 05期

关键词：

D O I：

10.1063/1.354575

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated proton implantation enhanced intermixing of GaAs/AlGaAs quantum wells for H+ doses ranging from 5 X 10(13) to 1 X 10(16) ions/cm2. Implantation of 20 keV H+ followed by a high temperature rapid thermal anneal leads to enhanced diffusion of Al into the GaAs quantum well. Shifts of electron-heavy hole recombination energies due to compositional changes were observed using room temperature cathodoluminescence. Diffusion lengths of longer than 2 nm were calculated from energy shifts in a 5 nm well and were found to vary with both implanted dose and anneal time, as expected if the enhanced interdiffusion is caused by implantation introduced defects.

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页码：3099 / 3102

页数：4

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