REVIEW AND PROJECTION OF SEMICONDUCTOR COMPONENTS FOR DIGITAL STORAGE

被引：14

作者：

HODGES, DA

机构：

[1] UNIV CALIF, DEPT ELECT ENGN & COMP SCI, BERKELEY, CA 94720 USA

[2] UNIV CALIF, ELECTR RES LAB, BERKELEY, CA USA

来源：

PROCEEDINGS OF THE IEEE | 1975年 / 63卷 / 08期

关键词：

D O I：

10.1109/PROC.1975.9906

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1136 / 1147

页数：12

相关论文

共 55 条

[1] ABBOTT RA, 1973, IEEE J SOLID STATE C, V8
[2] MAIN MONOLITHIC MEMORY
AYLING, JK
MOORE, RD
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1971, SC 6 (05) : 276 - &
[3] AYLING JK, 1969, ISSCC DIGEST TECH PA, V12, P36
[4] Berlekamp E. R., 1968, ALGEBRAIC CODING THE
[5] HIGH-PERFORMANCE LOW-POWER CMOS MEMORIES USING SILICON-ON-SAPPHIRE TECHNOLOGY
BOLEKY, EJ
MEYER, JE
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1972, SC 7 (02) : 135 - &
[6] DESIGN OF A HIGH-PERFORMANCE 1024-B SWITCHED CAPACITOR P-CHANNEL IGFET MEMORY CHIP
BOLL, HJ
LYNCH, WT
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1973, SC 8 (05) : 310 - 318
[7] 4096-B ONE-TRANSISTOR PER BIT RANDOM-ACCESS MEMORY WITH INTERNAL TIMING AND LOW DISSIPATION
BOONSTRA, L
LAMBRECHTSE, CW
SALTERS, RHW
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1973, SC 8 (05) : 305 - 310
[8] CHARGE COUPLED SEMICONDUCTOR DEVICES
BOYLE, WS
SMITH, GE
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1970, 49 (04): : 587 - +
[9] BREWER DE, 1967, FALL JOINT COMPUTER, V31, P381
[10] MNOS MEMORY TRANSISTORS IN SIMPLE MEMORY ARRAYS
CARLSTEDT, LG
SVENSSON, CM
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1972, SC 7 (05) : 382 - +

← 1 2 3 4 5 6 →