HIGH-QUALITY GAAS ON SI BY CONFORMAL GROWTH

被引：42

作者：

PRIBAT, D ^{[1
]}

GERARD, B ^{[1
]}

DUPUY, M ^{[1
]}

LEGAGNEUX, P ^{[1
]}

机构：

[1] CEN,CPM,LETI,F-38041 GRENOBLE,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 17期

关键词：

D O I：

10.1063/1.107064

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We propose a simple technique which allows the growth of low defect density GaAs films on Si substrates. This technique is based on conformal vapor phase epitaxy and uses a Si3N4 capping layer, as well as the Si surface itself for growth confinement. The as-grown conformal GaAs films exhibit a spectacular reduction in the density of dislocations, because of the latter blocking either on the Si3N4 cap or on the Si substrate. Dislocation densities below 5 X 10(5) cm-2 have been obtained in submicrometer-thick conformal GaAs films.

引用

页码：2144 / 2146

页数：3

共 9 条

[1] EARLY STAGES OF GROWTH OF GAAS ON SI OBSERVED BY SCANNING TUNNELING MICROSCOPY [J].