DEFECT FILTERING IN GAAS ON SI BY CONFORMAL GROWTH

被引：10

作者：

PRIBAT, D ^{[1
]}

PROVENDIER, V ^{[1
]}

DUPUY, M ^{[1
]}

LEGAGNEUX, P ^{[1
]}

COLLET, C ^{[1
]}

机构：

[1] CEN,CPM,LET,F-38041 GRENOBLE,FRANCE

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1991年 / 30卷 / 3B期

关键词：

GAAS/SI; VAPOR PHASE EPITAXY; CONFORMAL EPITAXY; LOW DISLOCATION DENSITY; DEFECT BLOCKING;

D O I：

10.1143/JJAP.30.L431

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using a newly developed technique of conformal growth, we show that low defect density GaAs films can be obtained from MBE or MOVPE GaAs-coated Si heterostructures. The defect characterization of the conformally grown films has been carried out using transmission electron microscopy and chemical etching. For the first time dislocation densities below 10(5)/cm2 have been observed in submicron GaAs films grown on Si by vapor phase epitaxy.

引用

页码：L431 / L434

页数：4

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