DEFECT-FREE, CONFORMALLY GROWN (100) GAAS FILMS

被引：3

作者：

PRIBAT, D ^{[1
]}

DUPUY, M ^{[1
]}

LEGAGNEUX, P ^{[1
]}

COLLET, C ^{[1
]}

机构：

[1] CEN,LETI CPM,F-38041 GRENOBLE,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 04期

关键词：

D O I：

10.1063/1.103696

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

By using selective epitaxy, submicron-thick (100) GaAs films can be conformally grown between two sandwiching dielectric layers. The defect structure of such GaAs films is investigated using chemical etching and transmission electron microscopy. The conformally grown films exhibit specular surfaces and appear virtually free from defects. A qualitative model for defect trapping is presented which suggests that the dislocations are blocked on the capping dielectric layer when they should thread laterally.

引用

收藏

页码：375 / 377

页数：3

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