DIRECT OBSERVATION OF RESOLIDIFICATION FROM THE SURFACE UPON PULSED-LASER MELTING OF AMORPHOUS-SILICON

被引：26

作者：

BRUINES, JJP ^{[1
]}

VANHAL, RPM ^{[1
]}

BOOTS, HMJ ^{[1
]}

SINKE, W ^{[1
]}

SARIS, FW ^{[1
]}

机构：

[1] FOM,INST ATOM & MOLEC PHYS,1098 SJ AMSTERDAM,NETHERLANDS

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 19期

关键词：

D O I：

10.1063/1.96995

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1252 / 1254

页数：3

共 14 条

[1] SUBSTRATE AND DOPING EFFECTS UPON LASER-INDUCED EPITAXY OF AMORPHOUS SILICON
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[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) : 881 - 885
[2] BRUINES JJP, 1986, ENERGY BEAM SOLID IN
[3] SI LIQUID-AMORPHOUS TRANSITION AND IMPURITY SEGREGATION
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[J]. APPLIED PHYSICS LETTERS, 1985, 46 (09) : 846 - 848
[4] TIME-RESOLVED ELLIPSOMETRY MEASUREMENTS OF THE OPTICAL-PROPERTIES OF SILICON DURING PULSED EXCIMER LASER IRRADIATION
JELLISON, GE
LOWNDES, DH
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (07) : 718 - 721
[5] LIQUID-AMORPHOUS AND LIQUID-CRYSTALLINE PHASE-TRANSFORMATION AND IMPURITY SEGREGATION PHENOMENA IN SILICON DURING PULSED DYE-LASER IRRADIATION
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (01): : 61 - 64
[6] PULSED EXCIMER (KRF) LASER MELTING OF AMORPHOUS AND CRYSTALLINE SILICON LAYERS
NARAYAN, J
WHITE, CW
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STRITZKER, B
WALTHUIS, A
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (02) : 564 - 567
[7] PHASE-TRANSFORMATION AND IMPURITY REDISTRIBUTION DURING PULSED LASER IRRADIATION OF AMORPHOUS-SILICON LAYERS
NARAYAN, J
WHITE, CW
HOLLAND, OW
AZIZ, MJ
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (06) : 1821 - 1830
[8] PULSED LASER MELTING OF AMORPHOUS-SILICON LAYERS
NARAYAN, J
WHITE, CW
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (01) : 35 - 37
[9] Shvarev K. M., 1975, Soviet Physics - Solid State, V16, P2111
[10] EVIDENCE FOR A SELF-PROPAGATING MELT IN AMORPHOUS-SILICON UPON PULSED-LASER IRRADIATION
SINKE, W
SARIS, FW
[J]. PHYSICAL REVIEW LETTERS, 1984, 53 (22) : 2121 - 2124

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