EFFECTS OF LOW-TEMPERATURE ANNEALING ON THE ELECTRICAL-PROPERTIES OF PLASMA GROWN OXIDES

被引：3

作者：

BARLOW, KJ ^{[1
]}

ECCLESTON, W ^{[1
]}

TAYLOR, S ^{[1
]}

机构：

[1] UNIV LIVERPOOL,DEPT ELECT ENGN & ELECTR,LIVERPOOL L69 3BX,ENGLAND

来源：

APPLIED SURFACE SCIENCE | 1987年 / 30卷 / 1-4期

关键词：

D O I：

10.1016/0169-4332(87)90072-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：47 / 51

页数：5

共 8 条

[1]

BALK P, 1965, OCT EL SOC M BUFF

[2] EFFECT OF CRYSTAL ORIENTATION ON PLASMA-GROWN OXIDES OF SILICON [J].

BARLOW, KJ ;

KIERMASZ, A ;

ECCLESTON, W .

ELECTRONICS LETTERS, 1985, 21 (04) :142-143

[3]

BARLOW KJ, THESIS U LIVERPOOL

[4]

BARLOW KJ, 1986, P INT C INFOS 85 AMS, P259

[5] ANODIZATION OF SILICON IN RF INDUCED OXYGEN PLASMA [J].

HO, VQ ;

SUGANO, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 :103-106

[6] HIGH-TEMPERATURE ANNEALING OF OXIDIZED SILICON SURFACES [J].

MONTILLO, F ;

BALK, P .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (09) :1463-+

[7] PLASMA OXIDATION OF SILICON [J].

MORUZZI, JL ;

KIERMASZ, A ;

ECCLESTON, W .

PLASMA PHYSICS AND CONTROLLED FUSION, 1982, 24 (06) :605-614

[8] COMPARISON OF RF AND MICROWAVE OXIDATION SYSTEMS FOR THE GROWTH OF THIN OXIDES AT LOW-TEMPERATURES [J].

TAYLOR, S ;

BARLOW, KJ ;

ECCLESTON, W ;

KIERMASZ, A .

ELECTRONICS LETTERS, 1987, 23 (07) :309-310

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