SCHOTTKY DIODE ANALYSIS FOR EVALUATION OF RIE EFFECTS ON SILICON SURFACES

被引：11

作者：

SPIRITO, P

RANSOM, CM

OEHRLEIN, GS

机构：

来源：

SOLID-STATE ELECTRONICS | 1986年 / 29卷 / 06期

关键词：

D O I：

10.1016/0038-1101(86)90141-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：607 / 611

页数：5

共 12 条

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[5]

COWLEY AM, 1970, SOLID STATE ELECTRON, V12, P403

[6]

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[7] STUDY OF SILICON CONTAMINATION AND NEAR-SURFACE DAMAGE CAUSED BY CF4/H2 REACTIVE ION ETCHING [J].

OEHRLEIN, GS ;

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PETRILLO, EJ .

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[8]

RANSOM CM, 1982, 161ST M EL SOC, V82, P346

[9]

RANSOM CM, 1985, 5TH P S PLASM PROC E, V579

[10]

RANSOM CM, 1983, PLASMA PROCESSING, P93

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