COMBINED APPLICATION OF SPREADING-RESISTANCE AND ELECTRON-MICROPROBE DEPTH PROFILING ON GAAS-ZN AND SI-P

Diffusion experiments of zinc in gallium arsenide and phosphorus in silicon were carried out by using the closed-ampoule technique. Penetration profiles were recorded by means of spreading-resistance (SR) as well as electron-microprobe (EMP) analysis revealing the electrically active and the total dopant concentration, respectively. To this aim both the two-point-probe (SR) and the electron beam (EMP) were step-wise moved along the same tracks on level planes which were produced by angle lapping of the diffused samples. It is shown how both depth-profiling techniques rely on calibration procedures performed on (partly the same) standard samples. Differences in the profiles measured by the two methods can be related to the occurrence of precipitates in the diffusion zone.